10A 1200V IGBT Transistor Module

Part No: JNFP10N120M1
BVCE(V): 1200V
Ic: 10A
VCE(sat)(typ.): 2.0V
Mounting Type: Through Hole
Full datasheet & price: please contact us

10A 1200V  IGBT transistor module


Features


 Short Circuit Rated 10μs

 Low Saturation Voltage: VCE (sat) = 2.0V @ IC = 10A , TC=25℃

 Low Switching Loss

 100% RBSOA Tested 2×Ic

 Low Stray Inductance

 Lead Free, Compliant with RoHS Requirement







Application


  Industrial Inverters

 Servo Applications










Absolute Maximum Ratings

Power Semiconductors.jpg


Electrical Characteristics

MOSFET Transistor Gate Drivers.jpg

SEMIKRON Transistor IGBT Modules.jpg


Package




IGBT Modules - Bipolar Transistors - In Stock.jpg

INQUIRY

CATEGORIES

CONTACT US

Contact: Ashley Wu

Phone: +8616620962210

E-mail: ashley@yxmicrochips.com

Add: A840, 8th floor, Building A,Huayuan Science and Technology Innovation Park No 168 Bao Yuan Rd,Xixiang,Bao'an District, ShenZhen