15A 1200V IGBT Transistor Module

Part No: JNFP15N120M1
BVCE(V): 1200V
Ic: 15A
VCE(sat)(typ.): 2.2 V
Mounting Type: Through Hole
Full datasheet & price: please contact us

15A 1200V  IGBT transistor module


Features


 Short Circuit Rated 10μs

 Low Saturation Voltage: VCE (sat) = 2.2V @ Ic = 15A , Tc=25℃

 Low Switching Loss

 100% RBSOA Tested 2×Ic

 Low Stray Inductance

 Lead Free, Compliant with RoHS Requirement







Application


  Industrial Inverters

 Servo Applications










Absolute Maximum Ratings

Trusted Infineon Quality transistor igbt module.jpg


Electrical Characteristics


Insulated gate bipolar transistor (IGBT) and diode modules.jpg

IGBT Module Power Semiconductors  Littelfuse.jpg


Package


China Manufacturer supply transistor IGBT power modules.jpg




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Contact: Ashley Wu

Phone: +8616620962210

E-mail: ashley@yxmicrochips.com

Add: A840, 8th floor, Building A,Huayuan Science and Technology Innovation Park No 168 Bao Yuan Rd,Xixiang,Bao'an District, ShenZhen