30A 600V IGBT Transistor Module

Part No: JNG30T60IPD1S1
BVCE(V): 600V
Ic: 30A
VCE(sat)(typ.): 2.1V
Mounting Type: Through Hole
Full datasheet & price: please contact us

30A 600V  IGBT transistor module


Description


⚫ IGBT drive: enhanced input filtering, high-speed 600V level conversion,

Power supply undervoltage protection, short circuit (overcurrent) protection

⚫ Fault signal: short circuit (overcurrent) and power supply undervoltage fault

⚫ Input interface: compatible with 3.3V & 5V input signals, high level is effective

⚫ Temperature detection: negative temperature coefficient detection output

⚫ Lower-side IGBT emitter output

⚫ Built-in low-loss 600V 30A IGBT three-phase inverter

⚫ Built-in bootstrap diode






Application


⚫ Air conditioner, refrigerator compressor

⚫ Low power inverter









Absolute Maximum Ratings

IGBT Diode Module FF200R12KE3.jpg


Electrical Characteristics

Original new IGBT Module PS21353-G.jpg



Package



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Contact: Ashley Wu

Phone: +8616620962210

E-mail: ashley@yxmicrochips.com

Add: A840, 8th floor, Building A,Huayuan Science and Technology Innovation Park No 168 Bao Yuan Rd,Xixiang,Bao'an District, ShenZhen