20A 600V TO-3P MOSFET transistor

20A 600V TO-3P MOSFET transistor

General Description

This Power MOSFET is produced using advanced

planar stripe DMOS technology. This advanced

technology has been especially tailored to minimize

on-state resistance, provide superior switching

performance, and withstand high energy pulse in the

avalanche and commutation mode. These devices

are well suited for high efficiency switched mode power

supplies, active power factor correction based on half

bridge topology.

Features

- 20A, 600V, RDS(on)typ. = 0.31Ω@VGS = 10 V

-Low gate charge (50nC)

- High ruggedness

- Fast switching

-100% avalanche tested

- Improved dv/dt capability

Absolute Maximum Ratings