Part No: JFPC18N60CI
VDS: 600V
ID: 18A
RDS(ON): 0.52Ω
Package: TO-220
Mounting Type: Through Hole
Full datasheet & price: please contact us
18A 600V TO-220 MOSFET transistor
General Description
This Power MOSFET is produced using advanced
planar stripe DMOS technology. This advanced
technology has been especially tailored to minimize
on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices
are well suited for high efficiency switched mode power
supplies, active power factor correction based on half
bridge topology.
Features
- 18A, 600V, RDS(on)typ. = 0.52Ω@VGS = 10 V
- Low gate charge
- High ruggedness
- Fast switching
- Improved dv/dt capability
Absolute Maximum Ratings
Contact: Ashley Wu
Phone: +8616620962210
E-mail: ashley@yxmicrochips.com
Add: A840, 8th floor, Building A,Huayuan Science and Technology Innovation Park No 168 Bao Yuan Rd,Xixiang,Bao'an District, ShenZhen