25A 600V TO-263 IGBT Transistor

Part No: JNG25T60HS
BVCE(V): 600V
Ic: 25A
VCE(sat)(typ.): 2.1V
Package: TO-263
Mounting Type: Surface Mount
Full datasheet & price: please contact us

600V 25A Power Transistor IGBT Transistors


Description


Yixing Trench IGBTs offer lower losses and higher energy

efficiency for application such as SMPS, general inverter

and other switching applications.



Features


 600V,25A

 VCE(sat)(typ.)=2.1V@VGE=15V,IC=25A

 High speed switching

 Higher system efficiency

 Soft current turn-off waveforms

 Square RBSOA



Absolute Maximum Ratings

Power Transistor IGBT Transistors.jpg


Electrical Characteristics

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Package

Toshiba IGBTs in Stock.jpg

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CONTACT US

Contact: Ashley Wu

Phone: +8616620962210

E-mail: ashley@yxmicrochips.com

Add: A840, 8th floor, Building A,Huayuan Science and Technology Innovation Park No 168 Bao Yuan Rd,Xixiang,Bao'an District, ShenZhen