20A 600V TO-263 IGBT Transistor

Part No: JNG20T60KS
BVCE(V): 600V
Ic: 20A
VCE(sat)(typ.): 1.85V
Package: TO-263
Mounting Type: Surface Mount
Full datasheet & price: please contact us

600V 20A Power Transistor IGBT Transistors


Description


Yixing trench IGBTs offer lower losses and higher energy

efficiency for application such as IH (induction heating),UPS,

general inverter and other soft switching applications.


Features


 600V,20A

 VCE(sat)(typ.)=1.85V@VGE=15V,IC=20A

 High speed switching

 Higher system efficiency

 Soft current turn-off waveforms

 Square RBSOA



Absolute Maximum Ratings

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Electrical Characteristics

Three-Dimensional Insulated Gate Bipolar Transistor.jpg



Package

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CONTACT US

Contact: Ashley Wu

Phone: +8616620962210

E-mail: ashley@yxmicrochips.com

Add: A840, 8th floor, Building A,Huayuan Science and Technology Innovation Park No 168 Bao Yuan Rd,Xixiang,Bao'an District, ShenZhen