30A 1200V TO-247 IGBT Transistor

Part No: JNG30N120HS2
BVCE(V): 1200V
Ic: 30A
VCE(sat)(typ.): 2.2 V
Package: TO-247
Mounting Type: Through Hole
Full datasheet & price: please contact us

1200V 30A Power Transistor IGBT Transistors


Description


Yixing Trench IGBTs offer lower losses and higher energy

efficiency for application such as IH (induction heating),UPS,

general inverter and other soft switching applications.





Features


 1200V,30A

 VCE(sat)(typ.)=2.2V @VGE=15V,Ic=30A

 High speed switching

 Higher system efficiency

 Soft current turn-off waveforms

 Square RBSOA using NPT technology






Absolute Maximum Ratings

transistor ic.jpg


Electrical Characteristics

Power Transistor IGBT Transistors.jpg



Package

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CONTACT US

Contact: Ashley Wu

Phone: +8616620962210

E-mail: ashley@yxmicrochips.com

Add: A840, 8th floor, Building A,Huayuan Science and Technology Innovation Park No 168 Bao Yuan Rd,Xixiang,Bao'an District, ShenZhen