40A 600V TO-3P-3 IGBT Transistor

Part No: JNG40T60AI
BVCE(V): 600V
Ic: 40A
VCE(sat)(typ.): 2.3V
Package: TO-3P-3
Mounting Type: Through Hole
Full datasheet & price: please contact us

600V 30A Power Transistor IGBT Transistors


Description


Yixing Trench IGBTs offer lower losses and higher energy

efficiency for application such as SMPS, general inverter

and other switching applications.



Features


 600V,40A

 VCE(sat)(typ.)=1.85V@VGE=15V,Ic=40A

 High speed switching

 Higher system efficiency

 Soft current turn-off waveforms

◼ Square RBSOA




Absolute Maximum Ratings

Three-Dimensional Insulated Gate Bipolar Transistor.jpg


Electrical Characteristics

Electronics Components IGBT.jpg



Package

Nxp Semiconductors.jpg


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CONTACT US

Contact: Ashley Wu

Phone: +8616620962210

E-mail: ashley@yxmicrochips.com

Add: A840, 8th floor, Building A,Huayuan Science and Technology Innovation Park No 168 Bao Yuan Rd,Xixiang,Bao'an District, ShenZhen