50A 600V TO-247 IGBT Transistor

Part No: JNG50T60HS
BVCE(V): 600V
Ic: 50A
VCE(sat)(typ.): 2.0 V
Package: TO-247
Mounting Type: Through Hole
Full datasheet & price: please contact us

600V 50A Power Transistor IGBT Transistors


Description


Yixing Trench IGBTs offer lower losses and higher energy

efficiency for application such as SMPS, general inverter

and other switching applications.



Features


 600V,50A

 VCE(sat)(typ.)=2.0V@VGE=15V,Ic=50A

 High speed switching

 Higher system efficiency

 Soft current turn-off waveforms

◼ Square RBSOA




Absolute Maximum Ratings

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Electrical Characteristics

IGBT transistor module.jpg



Package

transistor i.jpg


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Contact: Ashley Wu

Phone: +8616620962210

E-mail: ashley@yxmicrochips.com

Add: A840, 8th floor, Building A,Huayuan Science and Technology Innovation Park No 168 Bao Yuan Rd,Xixiang,Bao'an District, ShenZhen